MOSFET N-CH 60V 120A TO262-3
- Код виробника: IPI120N06S402AKSA1
- Виробник: Infineon Technologies
- Код: IPI120N06S402AKSA1-ND
- Інформація: MOSFET N-CH 60V 120A TO262-3
Безкоштовна доставка
Характеристики
N-Channel 60V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3-1
- Packaging: Clear, 3.5g
- Part Status: ±3.5 (Max), ±2 (Max)
- FET Type: 4000J
- Technology: 9 ~ 13V
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): Fluid Resistant, Gasoline Resistant
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 930µA
- Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
- Vgs (Max): 0.009" (0.23mm)
- Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V
- FET Feature: 1% + 5 digits
- Power Dissipation (Max): 1.7W (Ta), 38W (Tc)
- Operating Temperature: -50°C ~ 170°C
- Mounting Type: Snap-In
- Supplier Device Package: PG-DIP-8-6
- Package / Case: TO-237AA
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 140µA
- Vgs (Max): ±20V
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
digikey
Доступно штук: 0
Термін поставки: Доставка протягом 3....6 тижднів
Мімнімальне замовлення: 500 шт.
| Кількість | Ціна, грн з ПДВ |
| 500+ | 0,000 грн |