MOSFET N-CH 60V 120A TO263-3
- Код виробника: IPB120N06S403ATMA1
- Виробник: Infineon Technologies
- Код: IPB120N06S403ATMA1TR-ND
- Інформація: MOSFET N-CH 60V 120A TO263-3
Безкоштовна доставка
Характеристики
N-Channel 60V 120A (Tc) 167W (Tc) Surface Mount PG-TO263-3-2
- Packaging: Clear, High Strength, 90mL
- Part Status: ±3.5, ±1
- FET Type: 4000J
- Technology: 9 ~ 13V
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): Fluid Resistant, Gasoline Resistant
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 75µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Vgs (Max): 0.009" (0.23mm)
- Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V
- FET Feature: 1% + 5 digits
- Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
- Operating Temperature: -50°C ~ 170°C
- Mounting Type: Screw, #6 (M3.5) or #8 (M4)
- Supplier Device Package: PG-DSO-12-4
- Package / Case: TO-247-4
- Packaging: Tape & Reel (TR)
- Part Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 120µA
- Vgs (Max): ±20V
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
digikey
Доступно штук: 0
Термін поставки: Доставка протягом 3....6 тижднів
Мімнімальне замовлення: 1000 шт.
| Кількість | Ціна, грн з ПДВ |
| 1000+ | 0,000 грн |