MOSFET N-CH 60V 75A TO220-3
- Код виробника: IPP120N06NGAKSA1
- Виробник: Infineon Technologies
- Код: IPP120N06NGAKSA1-ND
- Інформація: MOSFET N-CH 60V 75A TO220-3
Безкоштовна доставка
Характеристики
N-Channel 60 V 75A (Tc) 158W (Tc) Through Hole PG-TO220-3-1
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 30 V
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Drain to Source Voltage (Vdss): 60 V
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Packaging: Clear, 3.5g
- Part Status: ±3.5 (Max), ±2 (Max)
- FET Type: 4000J
- Technology: 9 ~ 13V
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): Fluid Resistant, Gasoline Resistant
- Rds On (Max) @ Id, Vgs: 12.2mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 3V @ 4.38mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Vgs (Max): 0.009" (0.23mm)
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 30V
- FET Feature: 1% + 5 digits
- Power Dissipation (Max): 1.67W (Ta)
- Operating Temperature: -50°C ~ 170°C
- Mounting Type: Snap-In
- Supplier Device Package: P-DIP-14
- Package / Case: TO-205AF Metal Can
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 94µA
- Vgs (Max): ±20V
- Power Dissipation (Max): 158W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Доступно штук: 0
Термін поставки: Доставка протягом 3....6 тижднів
Мімнімальне замовлення: 0 шт.
Кількість | Ціна, грн з ПДВ |