MOSFET N-CH 60V 120A TO220-3
- Код виробника: IPP120N06S4H1AKSA2
- Виробник: Infineon Technologies
- Код: IPP120N06S4H1AKSA2-ND
- Інформація: MOSFET N-CH 60V 120A TO220-3
Безкоштовна доставка
Характеристики
N-Channel 60V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3-1
- Packaging: Clear, 3.5g
- Part Status: ±3.7, ±2.1
- FET Type: 4000J
- Technology: 9 ~ 13V
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): Fluid Resistant, Gasoline Resistant
- Rds On (Max) @ Id, Vgs: 190Ohm @ 10mA, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Vgs (Max): 0.009" (0.23mm)
- Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V
- FET Feature: 1% + 5 digits
- Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
- Operating Temperature: -50°C ~ 170°C
- Mounting Type: Snap-In
- Supplier Device Package: P-DIP-14
- Package / Case: TO-205AF Metal Can
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Vgs (Max): ±20V
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
digikey
Доступно штук: 0
Термін поставки: Доставка протягом 3....6 тижднів
Мімнімальне замовлення: 7000 шт.
| Кількість | Ціна, грн з ПДВ |
| 7000+ | 0,000 грн |