MOSFET N-CH 55V 80A I2PAK
- Код виробника: STB80NF55-06-1
- Виробник: STMicroelectronics
- Код: 497-16196-5-ND
- Інформація: MOSFET N-CH 55V 80A I2PAK
Безкоштовна доставка
Характеристики
N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole I2PAK
- Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
- Drain to Source Voltage (Vdss): 55 V
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Part Status: Active
- Supplier Device Package: I2PAK
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Packaging: Tube
- Packaging: Clear, 3.5g
- Part Status: ±3.5 (Max), ±1 (Max)
- FET Type: 4000J
- Technology: 9 ~ 13V
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 5.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): Fluid Resistant, Gasoline Resistant
- Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V
- Vgs(th) (Max) @ Id: 3.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V
- Vgs (Max): 0.009" (0.23mm)
- Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
- FET Feature: 1% + 5 digits
- Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
- Operating Temperature: -50°C ~ 170°C
- Mounting Type: Snap-In
- Supplier Device Package: EL 20 x 7.7
- Package / Case: TO-237AA
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Доступно штук: 0
Термін поставки: Доставка протягом 3....6 тижднів
Мімнімальне замовлення: 0 шт.
| Кількість | Ціна, грн з ПДВ |